IndiumV3, Russie, Analysis, bibRecord, 000675

Energy gap and optical properties of InxGa1-xN

Identifieur interne : 000675 ( Russie/Analysis ); précédent : 000674; suivant : 000676

Energy gap and optical properties of InxGa1-xN

Auteurs : RBID : Pascal:03-0218753

Descripteurs français

Pascal (Inist)
- Bande interdite, Calcul ab initio, Structure électronique, Limite absorption, Effet composition, Décomposition spinodale, Déformation biaxiale, Energie déformation, Etude théorique, Méthode fonctionnelle densité, Composé ternaire, Gallium nitrure, Indium nitrure, Semiconducteur III-V, Ga In N, InxGa1-xN, 7120N, 7820B, 7115M.

English descriptors

KwdEn :
- Ab initio calculations, Absorption edge, Biaxial strain, Composition effect, Density functional method, Electronic structure, Energy gap, Gallium nitrides, III-V semiconductors, Indium nitrides, Spinodal decomposition, Strain energy, Ternary compounds, Theoretical study.

Abstract

We present ab initio calculations of the electronic structure and the optical properties of In_xGa_1-xN. They are completed by studies of the strain influence on the alloys. The results are critically discussed in the light of recent experiments. We find an energy gap of InN < 1 eV and a nonparabolic absorption edge. The strong variation of the alloy gap with the In molar fraction is described by a composition-dependent bowing parameter. The tendency of spinodal decomposition is suppressed by biaxial strain. Its extent depends on the realization of strain accommodation.

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Links to Exploration step

Pascal:03-0218753

Le document en format XML

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Ga<sub>1-x</sub>
N</title>
<author><name sortKey="Bechstedt, F" uniqKey="Bechstedt F">F. Bechstedt</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institut für Festkörpertheorie und Theoretische Optik, Friedrich-Schiller-Universität, Max-Wien-Platz 1</s1>
<s2>07743 Jena</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
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<country>Allemagne</country>
<wicri:noRegion>07743 Jena</wicri:noRegion>
<wicri:noRegion>Max-Wien-Platz 1</wicri:noRegion>
<wicri:noRegion>07743 Jena</wicri:noRegion>
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</author>
<author><name sortKey="Furthm Ller, J" uniqKey="Furthm Ller J">J. Furthm Ller</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institut für Festkörpertheorie und Theoretische Optik, Friedrich-Schiller-Universität, Max-Wien-Platz 1</s1>
<s2>07743 Jena</s2>
<s3>DEU</s3>
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</author>
<author><name sortKey="Ferhat, M" uniqKey="Ferhat M">M. Ferhat</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institut für Festkörpertheorie und Theoretische Optik, Friedrich-Schiller-Universität, Max-Wien-Platz 1</s1>
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<author><name sortKey="Teles, L K" uniqKey="Teles L">L. K. Teles</name>
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<s2>05315-970 São Paulo, SP</s2>
<s3>BRA</s3>
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<author><name sortKey="Scolfaro, L M R" uniqKey="Scolfaro L">L. M. R. Scolfaro</name>
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<author><name sortKey="Leite, J R" uniqKey="Leite J">J. R. Leite</name>
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<author><name sortKey="Davydov, V Yu" uniqKey="Davydov V">V. Yu. Davydov</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Loffe Physico-Technical Institute, Russian Academy of Science, Polytechnicheskaya 26</s1>
<s2>194021 St. Petersburg</s2>
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<author><name sortKey="Ambacher, O" uniqKey="Ambacher O">O. Ambacher</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Center for Micro-and Nanotechnologies, Technical University, P.O. Box 100565</s1>
<s2>98693 Ilmenau</s2>
<s3>DEU</s3>
<sZ>8 aut.</sZ>
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</author>
<author><name sortKey="Goldhahn, R" uniqKey="Goldhahn R">R. Goldhahn</name>
<affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Institut für Physik, Technische Universität Ilmenau, PF 100565</s1>
<s2>98684 Ilmenau</s2>
<s3>DEU</s3>
<sZ>9 aut.</sZ>
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<seriesStmt><idno type="ISSN">0031-8965</idno>
<title level="j" type="abbreviated">Phys. status solidi, A, Appl. res.</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ab initio calculations</term>
<term>Absorption edge</term>
<term>Biaxial strain</term>
<term>Composition effect</term>
<term>Density functional method</term>
<term>Electronic structure</term>
<term>Energy gap</term>
<term>Gallium nitrides</term>
<term>III-V semiconductors</term>
<term>Indium nitrides</term>
<term>Spinodal decomposition</term>
<term>Strain energy</term>
<term>Ternary compounds</term>
<term>Theoretical study</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Bande interdite</term>
<term>Calcul ab initio</term>
<term>Structure électronique</term>
<term>Limite absorption</term>
<term>Effet composition</term>
<term>Décomposition spinodale</term>
<term>Déformation biaxiale</term>
<term>Energie déformation</term>
<term>Etude théorique</term>
<term>Méthode fonctionnelle densité</term>
<term>Composé ternaire</term>
<term>Gallium nitrure</term>
<term>Indium nitrure</term>
<term>Semiconducteur III-V</term>
<term>Ga In N</term>
<term>InxGa1-xN</term>
<term>7120N</term>
<term>7820B</term>
<term>7115M</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We present ab initio calculations of the electronic structure and the optical properties of In<sub>x</sub>
Ga<sub>1-x</sub>
N. They are completed by studies of the strain influence on the alloys. The results are critically discussed in the light of recent experiments. We find an energy gap of InN < 1 eV and a nonparabolic absorption edge. The strong variation of the alloy gap with the In molar fraction is described by a composition-dependent bowing parameter. The tendency of spinodal decomposition is suppressed by biaxial strain. Its extent depends on the realization of strain accommodation.</div>
</front>
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<fA14 i1="02"><s1>Instituto de Fisica, Universidade de Sao Paulo, CP66318</s1>
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<sZ>5 aut.</sZ>
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<fA14 i1="03"><s1>Loffe Physico-Technical Institute, Russian Academy of Science, Polytechnicheskaya 26</s1>
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<sZ>7 aut.</sZ>
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<fA14 i1="04"><s1>Center for Micro-and Nanotechnologies, Technical University, P.O. Box 100565</s1>
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<fA14 i1="05"><s1>Institut für Physik, Technische Universität Ilmenau, PF 100565</s1>
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Ga<sub>1-x</sub>
N. They are completed by studies of the strain influence on the alloys. The results are critically discussed in the light of recent experiments. We find an energy gap of InN < 1 eV and a nonparabolic absorption edge. The strong variation of the alloy gap with the In molar fraction is described by a composition-dependent bowing parameter. The tendency of spinodal decomposition is suppressed by biaxial strain. Its extent depends on the realization of strain accommodation.</s0>
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<s2>NK</s2>
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<s5>52</s5>
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<fC03 i1="16" i2="3" l="FRE"><s0>InxGa1-xN</s0>
<s4>INC</s4>
<s5>53</s5>
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<fC03 i1="17" i2="3" l="FRE"><s0>7120N</s0>
<s2>PAC</s2>
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<s5>56</s5>
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Energy gap and optical properties of InxGa1-xN

Energy gap and optical properties of InxGa1-xN

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